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| DTC125TUA / DTC125TKA / DTC125TSA Transistors Digital transistor (built-in resistor) DTC125TUA / DTC125TKA / DTC125TSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. !External dimensions (Units : mm) 0.65 0.65 0.7 DTC125TUA 0.3 (3) (1) 1.25 2.1 0.15 0.2 (2) 0.1to0.4 0to0.1 Each lead has same dimensions 0.9 1.3 2.0 ROHM : UMT3 EIAJ : SC-70 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) (1) DTC125TKA !Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power DTC125TUA / DTC125TKA dissipation DTC125TSA Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 200 300 150 -55 +150 Unit V V V mA mW C C 0.4 (3) 1.6 2.8 0.15 0.3to0.6 0to0.1 Each lead has same dimensions 0.8 1.1 0.95 0.95 1.9 2.9 (2) ROHM : SMT3 EIAJ : SC-59 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) DTC125TSA 4 3 2 Part No. Package Marking Packaging code Basic ordering unit (pieces) DTC125TUA UMT3 0A T106 3000 DTC125TKA SMT3 0A T146 3000 DTC125TSA SPT - TP 5000 (15Min.) !Package, marking, and packaging specifications 3Min. 0.45 2.5 5 (1) (2) (3) 0.5 0.45 Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. 50 50 5 - - - 100 140 - Typ. - - - - - - 250 200 250 Max. - - - 0.5 0.5 0.3 600 260 - Unit V V V A A V - k MHz IC = 50A IC = 1mA IE = 50A VCB = 50V VEB = 4V IC = 0.5mA , IB = 0.05mA IC = 1mA , VCE = 5V - VCE = 10V , IE = -5mA , f = 100MHz Conditions !Circuit schematic B R1 C E E : Emitter C : Collector B : Base Transition frequency Transition frequency of the device. |
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